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Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10495/8289
Título : Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
Autor : Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.
Palabras clave : Electrones
Espectroscopia
Positrón
Silicio
Fecha de publicación : 1998
Editorial : The American Physical Society
Citación : Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483.
Abstract : Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron lifetime and positron binding energy to defects, we also calculate the momentum distribution of annihilation photons (MDAP) for high momenta, which has been recently shown to be a useful quantity for defect identification in semiconductors. The influence of atomic relaxations around defects on positron properties is also examined. Mutual differences among the high momentum parts of the MDAP for various defects studied are mostly considerable, which can be used for the experimental defect determination.
Grupo de INV. : Grupo Estado Sólido
URI : http://hdl.handle.net/10495/8289
ISSN : 10980121
1550235 E
Aparece en las colecciones: CIEN (Centro de Investigaciones en Ciencias Exactas y Naturales)

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